Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications includ

文件：148.09 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Ultrafast recovery - 1200 V diode

ST

意法半导体

Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications includ

文件：148.09 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications includ

文件：148.09 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 1.2KV 3A DPAK

STMICROELECTRONICS

意法半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 1.2KV 3A DPAK

STMICROELECTRONICS

意法半导体