AD6676EBZ

WidebandIFReceiverSubsystem

CD6676

SILICONDIOXIDEPASSIVATED

•IN6677AVAILABLEINJANHCANDJANKCPERMIL-PRF-19500/610 •0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERCHIPS •SILICONDIOXIDEPASSIVATED •COMPATIBLEWITHALLWIREBONDINGANDDIEATTACHTECHNIQUES,WITHTHEEXCEPTIONOFSOLDERREFLOW

CDLL6676

0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERS

•1N6677UR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/610 •0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERS •HERMETICALLYSEALED •LEADLESSPACKAGEFORSURFACEMOUNT •METALLURGICALLYBONDED •DOUBLEPLUGCONSTRUCTION

CDLL6676

0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERS

•1N6677UR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/610 •0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERS •HERMETICALLYSEALED •LEADLESSPACKAGEFORSURFACEMOUNT •METALLURGICALLYBONDED •DOUBLEPLUGCONSTRUCTION

F6676

OFF-LINEQUASI-RESONANTFLYBACKSWITCHINGREGULATOR

FEATURES ■Quasi-ResonantOperation ■OutputPowerto120W ■Low-Loss,Pulse-Ratio-ControlStandbyMode ■Temperature-CompensatedPulse-by-PulseOver-CurrentProtection ■LatchedOver-VoltageandThermalProtection ■Under-VoltageLockoutwithHysteresis ■ActiveLow-PassFilterforEnhanc

FDB6676

30VN-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedfor“lowside”synchronousrectifieroperation,providinganextremelylowRDS(O

FDB6676S

30VN-ChannelPowerTrenchSyncFET?

GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP/B6676SincludesanintegratedSchottky

FDD6676

N-channelAdvancedModePowerMOSFET

Features VDS=40V,ID=150A RDS(ON)

FDD6676

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=78A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

FDD6676

30VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed.extremelylowRDS(ON