650 V, 6 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Operating Tj from -55 °C to 175 °C • ECOPACK2 compliant component

文件：538.57 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

650 V, 6A High surge Silicon Carbide power Schottky diode

The SiC diode STPSC6G065, available in TO-220AC, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no rec • No reverse recovery charge in application current range \n• High forward surge capability \n• ECOPACK2 compliant component;

ST

意法半导体

丝印：PSC6G065D；Package：TO-220AC；650 V, 6 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Operating Tj from -55 °C to 175 °C • ECOPACK2 compliant component

文件：538.57 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

TO-92

ST

上传：深圳市美思瑞电子科技有限公司

TO-263

Viking光颉

上传：北京明辉峰尚科技有限公司