STPSC31H12C-Y中文资料意法半导体数据手册PDF规格书

特性 Features

• AEC-Q101 qualified

• No or negligible reverse recovery

• Switching behavior independent of temperature

• Robust high-voltage periphery

• PPAP capable

• Operating Tj from -40 °C to 175 °C

• ECOPACK 2 compliant

Applications

• OBC (on board battery chargers)

• PHEV - EV charging stations

• Resonant LLC topology

• PFC functions (power factor corrector)

描述 Description

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky

rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap

material allows the design of a low VF Schottky diode structure with a 1200 V rating.

Due to the Schottky construction, no recovery is shown at turn-off and ringing

patterns are negligible. The minimal capacitive turn-off behavior is independent of

temperature.

Especially suited for use in PFC and secondary side applications, this ST SiC diode

will boost the performance in hard switching conditions. This rectifier will enhance the

performance of the targeted application. Its high forward surge capability ensures a

good robustness during transient phases.