丝印：STPS20150CR；Package：I2PAK；High voltage power Schottky rectifier

Features • High junction temperature capability • Good trade off between leakage current and forward voltage drop • Low leakage current • Avalanche capability specified • Insulated package: TO-220FPAB – Insulating voltage = 2000 VRMS sine • ECOPACK®2 compliant component for D²PAK on demand

文件：294.23 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Description Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. Features ■ HIgh junction temperature capability ■ Good trade off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated packa

文件：109.48 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Package：TO-262-3，长引线，I²Pak，TO-262AA；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 150V I2PAK

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Description Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. Features ■ HIgh junction temperature capability ■ Good trade off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated packa

文件：109.48 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

ULTRA FAST RECOVERY MODULES

文件：231.22 Kbytes 页数：4 Pages

MICROSEMI

美高森美

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a

文件：167.54 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司