4 x 50 W MOSFET quad bridge power amplifier

Features  Multipower BCD technology  High output power capability: – 4 x 50 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Ω Max.  MOSFET output power stage  2 Ω driving capability  Hi-Fi class distortion  Low output noise  High immunity to RF noise injection 

文件：638.7 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

4 x 50 W MOSFET quad bridge power amplifier

Features  Multipower BCD technology  High output power capability: – 4 x 50 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Ω Max.  MOSFET output power stage  2 Ω driving capability  Hi-Fi class distortion  Low output noise  High immunity to RF noise injection 

文件：638.7 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

4 x 50 W MOSFET quad bridge power amplifier

Features  Multipower BCD technology  High output power capability: – 4 x 50 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Ω Max.  MOSFET output power stage  2 Ω driving capability  Hi-Fi class distortion  Low output noise  High immunity to RF noise injection 

文件：638.7 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

4 x 50 W MOSFET quad bridge power amplifier

Features  Multipower BCD technology  High output power capability: – 4 x 50 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Ω Max.  MOSFET output power stage  2 Ω driving capability  Hi-Fi class distortion  Low output noise  High immunity to RF noise injection 

文件：638.7 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

4 x 52 W quad bridge power amplifier with low voltage operation

Features  High output power capability: – 4 x 52 W/4 Ω max. – 4 x 30 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 85 W/2 Ω max. – 4 x 55 W/2 Ω @ 14.4V, 1 kHz, 10 %  MOSFET output power stage  Stop-start and hybrid engines compliant  Excellent 2  driving capability  Hi-Fi class distorti

文件：581.72 Kbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

4 x 52 W quad bridge power amplifier with low voltage operation

Features  High output power capability: – 4 x 52 W/4 Ω max. – 4 x 30 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 85 W/2 Ω max. – 4 x 55 W/2 Ω @ 14.4V, 1 kHz, 10 %  MOSFET output power stage  Stop-start and hybrid engines compliant  Excellent 2  driving capability  Hi-Fi class distorti

文件：581.72 Kbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

4 x 52 W quad bridge power amplifier with low voltage operation

Features  High output power capability: – 4 x 52 W/4 Ω max. – 4 x 30 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 85 W/2 Ω max. – 4 x 55 W/2 Ω @ 14.4V, 1 kHz, 10 %  MOSFET output power stage  Stop-start and hybrid engines compliant  Excellent 2  driving capability  Hi-Fi class distorti

文件：581.72 Kbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

4 x 52 W quad bridge power amplifier with high side driver and low voltage operation

Features  High output power capability: – 4 x 52 W/4 Ω max. – 4 x 30 W/4 Ω @ 14.4 V, 1 kHz, 10 – 4 x 85 W/2 Ω max. – 4 x 55 W/2 Ω @ 14.4V, 1 kHz, 10  MOSFET output power stage  Capable to operate in low voltage conditions (e.g.: “Start - Stop”)  Excellent GSM noise immunity  Excel

文件：455.54 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

4 x 52 W quad bridge power amplifier with high side driver and low voltage operation

Features  High output power capability: – 4 x 52 W/4 Ω max. – 4 x 30 W/4 Ω @ 14.4 V, 1 kHz, 10 – 4 x 85 W/2 Ω max. – 4 x 55 W/2 Ω @ 14.4V, 1 kHz, 10  MOSFET output power stage  Capable to operate in low voltage conditions (e.g.: “Start - Stop”)  Excellent GSM noise immunity  Excel

文件：455.54 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

4 x 52 W quad bridge power amplifier with high side driver and low voltage operation

Features  High output power capability: – 4 x 52 W/4 Ω max. – 4 x 30 W/4 Ω @ 14.4 V, 1 kHz, 10 – 4 x 85 W/2 Ω max. – 4 x 55 W/2 Ω @ 14.4V, 1 kHz, 10  MOSFET output power stage  Capable to operate in low voltage conditions (e.g.: “Start - Stop”)  Excellent GSM noise immunity  Excel

文件：455.54 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体