STP3LN80K5中文资料意法半导体数据手册PDF规格书

Features

 Industry’s lowest RDS(on) x area

 Industry’s best FoM (figure of merit)

 Ultra-low gate charge

 100 avalanche tested

 Zener-protected

Applications

 Switching applications

Description

These very high voltage N-channel Power

MOSFET are designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.