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STP14NM65N中文资料PDF规格书
STP14NM65N规格书详情
Description
This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
产品属性
- 型号:
STP14NM65N
- 功能描述:
MOSFET N-channel 650V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
NA/ |
80 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST |
2020+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ST |
假一赔十 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST全系列 |
22+23+ |
TO-220 |
26759 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST |
23+ |
N/A |
50000 |
全新原装现货热卖 |
询价 | ||
ST/韩国太虹 |
TO-220 |
265209 |
假一罚十,原包原标签,常备现货 |
询价 | |||
ST-意法半导体 |
24+25+/26+27+ |
TO-220-3 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
ST |
07+/08+ |
TO-220-3 |
945 |
询价 | |||
ST |
23+ |
TOTO-220ABNONISOL |
35400 |
全新原装真实库存含13点增值税票! |
询价 | ||
ST/意法 |
22+ |
TO-220 |
1500 |
原装现货假一赔十 |
询价 |