The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

文件：233.32 Kbytes 页数：7 Pages

STANSON

司坦森

Dual N-Channel 20-V (D-S) MOSFET

文件：985.78 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

Stanson

司坦森

Dual N-Channel MOSFET uses advanced trench technology

文件：2.4056 Mbytes 页数：4 Pages

DOINGTER

杜因特

Plastic-Encapsulate MOSFETS

Description The TF9926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● High power and current handing capability ●

文件：3.66001 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体

Plastic-Encapsulate MOSFETS

Description The TF9926A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● High power and current handing capability

文件：3.57854 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体