Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：520.26 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual N Channel Enhancement Mode MOSFET

文件：776.92 Kbytes 页数：6 Pages

STANSON

司坦森

Tranch MOSFET

Stanson

司坦森

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free

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EIC

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

文件：61.72 Kbytes 页数：4 Pages

EIC

SURFACE MOUNT SILICON ZENER DIODES

文件：115.29 Kbytes 页数：2 Pages

EIC