STN6303中文资料Dual N Channel Enhancement Mode MOSFET数据手册Stanson规格书
STN6303规格书详情
描述 Description
STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer circuits where high-side switching, low in-line power loss and resistance to transients are needed.
特性 Features
• 23V/0.5A, RDS(ON) = 400m-ohm@VGS =4.5V
• 23V/0.75A, RDS(ON) =550m-ohm@VGS =2.5V
• Super high density cell design for extremely low RDS(ON)
• Exceptional low on-resistance and maximum DC current capability
• SOT-363 / SC70-6L package design
技术参数
- 型号:
STN6303
- 制造商:
STANSON
- 制造商全称:
STANSON
- 功能描述:
STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STANSON |
2450+ |
TSOP6 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
询价 | ||
ST |
24+ |
SOT223 |
96000 |
原装公司大量现货,欢迎来电 |
询价 | ||
STANSON |
20+ |
SOT23-6 |
6164 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
STANSONTECH |
2022+ |
SOT-23-6 |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
Bychip/百域芯 |
21+ |
SOT223 |
30000 |
优势供应 品质保障 可开13点发票 |
询价 | ||
NK/南科功率 |
2025+ |
SOT-363 |
986966 |
国产 |
询价 | ||
ST |
24+ |
SOT-223TO-261 |
7500 |
询价 | |||
ST |
22+ |
SOT363 |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
ST |
23+ |
SOT-223 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST |
2511 |
SOT363 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 |