Dual N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

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Samhop

三合微科

Mosfets

Samhop

三合微科

Extensions bars, DIN 3122 and 3123. 1/4 6.3 DIN 3120/ISO 1174

文件：87.46 Kbytes 页数：1 Pages

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Extensions bars, DIN 3122 and 3123. 1/4 6.3 DIN 3120/ISO 1174

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10 AMP SUBMINIATURE POWER RELAY

FEATURES • High sensitivity, 120 mW pickup • Dielectric strength 5000 Vrms • Isolation spacing greater than 10 mm • Proof tracking index (PTI/CTI) 250 • 10 Amp switching capability • Epoxy sealed version available • Reinforced insulation, EN 60730-1 (VDE 0631, part 1) EN 6

文件：55.84 Kbytes 页数：2 Pages

ZETTLER

ZETTLER Electronics