Dual N-Channel E nhancement Mode Field Effect Transistor

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文件：718.93 Kbytes 页数：7 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES • Super high dense cell design for low RDS(ON). • Surface Mount Package. • Rugged and reliable.

文件：697.77 Kbytes 页数：7 Pages

Samhop

三合微科

Surface Mount N-Channel Enhancement Mode MOSFET

DRAIN CURRENT 5 AMPERES 40 VOLTAGE DRAIN SOURCE VOLTAGE Features: *Super high dense cell design for low RDS(ON) *Dual N MOSFET Package *Simple Drive Requirement *SO-8 Package RDS(ON)

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三合微科