IGBT Sunbber

Snubber,吸收电容，适用于IGBT缓冲线路的突波吸收， 具有多种规格和安装方式，以满足设计需求。 工作温度 : - 40 至 + 105 ˚C\n容量范围 : 0.0047 至 10μF\n额定电压 : 700 至 3000 VDC\n容量偏差 : ± 5% , ± 10%\n损耗因素 : ≤6×10-4 @1KHz 20±5˚C\n预期寿命 : 100,000 小时@Un, 70 ˚C (热点温度)\n极间耐压 : 1.5Un (DC) , （ 10s , 20±5˚C）\n极壳耐压 : (1.5Un+1000)VAC,最小3000VAC（10s，50Hz）\n绝缘电阻 : （ IR×Cn） 30000s（不超过;

EACO

Low Pass Filter DC to 450 MHz (40 dB Isolation up to 20 GHz)

文件：111.26 Kbytes 页数：1 Pages

MINI

THREE CHANNELS HIGH SIDE SMART SOLID STATE RELAY

DESCRIPTION The VN450 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side connected to ground. This device has three independant channels and three diagnostics. Built-in thermal shut-down protects th

文件：261.93 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot = 1 Watt

文件：49.98 Kbytes 页数：2 Pages

ZETEX