P-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

文件：651.46 Kbytes 页数：7 Pages

Samhop

三合微科

P-Channel MOSFET uses advanced trench technology

文件：1.66869 Mbytes 页数：5 Pages

DOINGTER

杜因特

Mosfets

Samhop

三合微科

DELAY MODULES,TTL,SURFACE MOUNTED

文件：137.17 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel 30-V (D-S) MOSFET

文件：418.14 Kbytes 页数：5 Pages

AnalogPower

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4437 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO4437 is Pb-free (meets RO

文件：115.37 Kbytes 页数：3 Pages

AOSMD

万国半导体