STM32F411VC数据手册ST中文资料规格书

描述 Description

The STM32F411xC/xE devices are based on the high-performance Arm® Cortex® -M4 32-bit RISC core operating at a frequency of up to 100 MHz. The Cortex®-M4 core features a floating-point unit (FPU) single precision, which supports all Arm single-precision data-processing instructions and data types. It also implements a full set of DSP instructions and a memory protection unit (MPU), which enhances application security.

The STM32F411xC/xE belongs to the STM32 Dynamic Efficiency product line (with products combining power efficiency, performance and integration) while adding a new innovative feature called Batch Acquisition Mode (BAM) allowing to save even more power consumption during data batching.

The STM32F411xC/xE incorporate high-speed embedded memories (up to 512 Kbytes of flash memory, 128 Kbytes of SRAM), and an extensive range of enhanced I/Os and peripherals connected to two APB buses, two AHB bus and a 32-bit multi-AHB bus matrix.

All devices offer one 12-bit ADC, a low-power RTC, six general-purpose 16-bit timers including one PWM timer for motor control, two general-purpose 32-bit timers. They also feature standard and advanced communication interfaces.

特性 Features

• Includes ST state-of-the-art patented technology
• Dynamic efficiency line with BAM (Batch acquisition mode)
•1.7 V to 3.6 V power supply
•- 40°C to 85/105/125 °C temperature range
• Core: Arm® 32-bit Cortex®-M4 CPU with FPU, adaptive real-time accelerator (ART Accelerator) allowing 0-wait state execution from flash memory, frequency up to 100 MHz, memory protection unit, 125 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1), and DSP instructions
• Memories
•Up to 512 Kbytes of flash memory
•128 Kbytes of SRAM
• Clock, reset, and supply management
•1.7 V to 3.6 V application supply and I/Os
•POR, PDR, PVD, and BOR
•4-to-26 MHz crystal oscillator
•Internal 16 MHz factory-trimmed RC
•32 kHz oscillator for RTC with calibration
•Internal 32 kHz RC with calibration
• Power consumption
•Run: 100 µA/MHz (peripheral off)
•Stop (Flash in Stop mode, fast wakeup time): 42 µA typical at 25 °C; 65 µA max at 25 °C
•Stop (Flash in Deep power down mode, slow wakeup time): down to 9 µA at 25 °C; 28 µA max at 25 °C
•Standby: 1.8 µA at 25 °C / 1.7 V without RTC; 11 µA at 85 °C at 1.7 V
•VBAT supply for RTC: 1 µA at 25 °C
• 1×12-bit, 2.4 MSPS A/D converter: up to 16 channels
• General-purpose DMA: 16-stream DMA controllers with FIFOs and burst support
• Up to 11 timers: up to six 16-bit, two 32-bit timers up to 100 MHz, each with up to four IC/OC/PWM or pulse counter and quadrature (incremental) encoder input, two watchdog timers (independent and window) and a SysTick timer
• Debug mode
•Serial wire debug (SWD) & JTAG interfaces
•CortexÒ-M4 Embedded Trace Macrocell™
• Up to 81 I/O ports with interrupt capability
•Up to 78 fast I/Os up to 100 MHz
•Up to 77 5 V-tolerant I/Os
• Up to 13 communication interfaces
•Up to 3 x I2C interfaces (SMBus/PMBus)
•Up to 3 USARTs (2 x 12.5 Mbit/s, 1 x 6.25 Mbit/s), ISO 7816 interface, LIN, IrDA, modem control)
•Up to 5 SPI/I2Ss (up to 50 Mbit/s, SPI, or I2S audio protocol), SPI2 and SPI3 with muxed full-duplex I2S to achieve audio class accuracy via internal audio PLL or external clock
•SDIO interface (SD/MMC/eMMC)
•Advanced connectivity: USB 2.0 full-speed device/host/OTG controller with on-chip PHY
• CRC calculation unit
• 96-bit unique ID
• RTC: subsecond accuracy, hardware calendar
• All packages are ECOPACK2 compliant