Automotive-grade N-channel 40 V, 1.3 m typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features  Designed for automotive applications and AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Description This N-channel Power MOSFET utilizes

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STMICROELECTRONICS

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Automotive N-channel 40 V, 1.35 m typ., 120 A, STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 package

Features • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness • Wettable flank package Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced t

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STMICROELECTRONICS

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N-channel 650 V, 0.175 廓, 17 A PowerFLAT??(8x8) HV ultra low gate charge MDmesh??V Power MOSFET

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STMICROELECTRONICS

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汽车级N沟道40 V、1.3 mOhm典型值、120 A STripFET F7功率MOSFET，PowerFLAT 5x6封装

该N-沟道功率MOSFET利用STripFET™F7技术和增强型沟槽栅极结构，可降低通态电阻，同时降低内部电容和栅极电荷，从而使开关速度更快、能效更高。 • 专为汽车应用设计并通过AEC-Q101认证 \n• 处于市面上最低的RDS(on) 行列 \n• 出色的品质因数（FoM） \n• 较低的 Crss/Ciss 比值使得其具有更强的抗EMI能力 \n• 坚固的抗雪崩能力 \n• 侧面可焊性封装;

ST

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汽车级N沟道40 V、1.3 mOhm典型值、120 A STripFET F7功率MOSFET，PowerFLAT 5x6封装

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. • AEC-Q101 qualified \n• Among the lowest RDS(on) on the market \n• Excellent FoM (figure of merit) \n• Low Crss/Ciss ratio for EMI immunity \n• High avalanche ruggedness \n• Wettable flank package;

ST

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N沟道650 V、0.175 Ohm典型值、2.7 A MDmesh M5功率MOSFET，PowerFLAT 8x8 HV封装

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-bas • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

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