N沟道650 V、0.325 Ohm典型值、7.5 A MDmesh M2功率MOSFET，PowerFLAT 5x6 HV封装

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

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丝印：16N65M2；Package：PowerFLAT5x6HV；N-channel 650 V, 0.325 ??typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT??5x6 HV package

文件：947.95 Kbytes 页数：16 Pages

STMICROELECTRONICS

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N-channel 650 V, 0.32 ??typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high effic

文件：824.02 Kbytes 页数：16 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

文件：304.59 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.32 ??typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high effic

文件：824.02 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体