N沟道650 V、0.335 Ohm典型值、10 A MDmesh M5功率MOSFET，PowerFLAT 5x6 HV封装

This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and super • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体

Low gate charge and input capacitance

文件：1.06259 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：320.25 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.308 廓 typ., 11 A MDmesh??V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages

文件：925.13 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.308 ohm typ., 11 A MDmesh V Power MOSFET

文件：925.13 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体