N-channel 600 V, 295 m typ., 8.5 A, MDmesh DM6 Power MOSFET in a PowerFLAT 5x6 HV package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

文件：579.45 Kbytes 页数：15 Pages

STMICROELECTRONICS

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N-channel 600 V, 295 mOhm typ., 8.5 A MDmesh DM6 Power MOSFET in PowerFLAT 8x8 HV package

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching be • Fast-recovery body diode\n• Lower RDS(on) per area vs previous generation\n• Low gate charge, input capacitance and resistance\n• 100% avalanche tested\n• Extremely high dv/dt ruggedness\n• Zener-protected;

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意法半导体

N-channel 600 V, 295 m typ., 8.5 A, MDmesh DM6 Power MOSFET in a PowerFLAT 5x6 HV package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

文件：579.45 Kbytes 页数：15 Pages

STMICROELECTRONICS

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N-channel 600 V, 286 m廓 typ., 12 A MDmesh DM6 Power MOSFET in a DPAK package

文件：346.53 Kbytes 页数：17 Pages

STMICROELECTRONICS

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