Automotive-grade N-channel 40 V, 1.2 m typ., 100 A STripFETTM F7 Power MOSFET in a LFPAK 5x6 package

Features • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that

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STMICROELECTRONICS

意法半导体

汽车级N沟道40 V、1.2 mOhm典型值、100 A STripFET F7功率MOSFET，LFPAK 5x6封装

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. • AEC-Q101 qualified \n• Among the lowest RDS(on) on the market \n• Excellent FoM (figure of merit) \n• Low Crss/Ciss ratio for EMI immunity \n• High avalanche ruggedness;

ST

意法半导体

QFN

Sensortek

昇佳电子

上传：深圳市明嘉莱科技有限公司

LGA

Sitronix

矽创电子

上传：深圳市兴联达电子有限公司(原兴达电子)

SMD

矽创Sitronix

上传：深圳市创鸿光电子有限公司