STI70N10F4

丝印：70N10F4；Package：I2PAK；N-channel 100 V, 0.015 Ω, 60 A, STripFET™ DeepGATE™ Power MOSFET in I2PAK

Features ■Exceptionaldv/dtcapability ■Extremelylowon-resistanceRDS(on) ■100avalanchetested Application ■Switchingapplications Description ThisSTripFET™DeepGATE™PowerMOSFET technologyisamongthelatestimprovements, whichhavebeenespeciallytailoredtominimize on-

STP70N10F4

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=65A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.0195Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STP70N10F4

N-Channel100-V(D-S)MOSFET

STP70N10F4

N-channel100V,0.015廓,60A,STripFET??DeepGATE??PowerMOSFETinTO-220,DPAK,TO-247,D2PAK

STI7100PWC

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