丝印：410N4F7；Package：I2PAK；Automotive N-channel 40 V, 1.5 mΩ typ., 180 A STripFET™ F7 Power MOSFET in an I²PAK package

Features  Designed for automotive applications  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFE

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STMICROELECTRONICS

意法半导体

N Channel Enhancement Mode MOSFET

文件：498.13 Kbytes 页数：8 Pages

STANSON

司坦森

N-Channel MOSFET uses advanced trench technology

文件：986.06 Kbytes 页数：4 Pages

DOINGTER

杜因特

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package. ● ESD Protected.

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SAMHOP

三合微科