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STI16NM50N中文资料PDF规格书
STI16NM50N规格书详情
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
产品属性
- 型号:
STI16NM50N
- 功能描述:
MOSFET N-Channel 500V Pwr Mosfet
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
TO220MONOC.. |
96610 |
询价 | |||
ST |
15+ |
TO-262 |
10000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法 |
23+ |
TO220MONOC.. |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
ST |
TO220MONO |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST-意法半导体 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
ST |
17+ |
I2PAK |
6200 |
询价 | |||
ST |
22+ |
TO-262 |
8700 |
原装现货 |
询价 | ||
ST |
23+ |
TOTO-220MONO |
35400 |
全新原装真实库存含13点增值税票! |
询价 | ||
ST |
08+(pbfree) |
TO220MONOC.. |
8866 |
询价 | |||
ST |
2023+ |
TO-262 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 |