N沟道950 V、1 Ohm典型值、6 A MDmesh K5功率MOSFET，H2PAK-2封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best figure of merit (FoM) \n• Ultra low gate charge \n• 100% avalanche tested \n• Zener-protected;

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STMICROELECTRONICS

意法半导体

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BGA

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ST/意法
BGA

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SUNTO
ESOP8

SUNTO

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