Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET in an H2PAK-7 package

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which • AEC-Q101 qualified \n• Fast-recovery body diode \n• Very low FOM (RDS(on)·Qg) \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggednes \n• Excellent switching performance thanks to the extra driving source pin;

ST

意法半导体

BGA

ST

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BGA

ST/意法

上传：芯灿微（深圳）科技有限公司

拓尔微

上传：深圳市金宝鑫科技有限公司

ESOP8

SUNTO

上传：深圳市鼎欣微电子有限公司