丝印：H3N150；Package：H2PAK-2；N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

Features • 100 avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.) Applications • Switching applications Description These Power MOSFETs are designed using the STMicroelectron

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STMICROELECTRONICS

意法半导体

N沟道1500 V、6 Ohm典型值、2.5 A PowerMESH(TM) 功率MOSFET，H2PAK-2封装

These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. • 100% avalanche tested \n• Intrinsic capacitances and Qg minimized \n• High speed switching \n• Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.);

ST

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N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET

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STMICROELECTRONICS

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N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF

文件：765.91 Kbytes 页数：15 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

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ISC

无锡固电