汽车级N沟道650 V、102 mOhm典型值、28 A MDmesh DM6功率MOSFET，H2PAK-7封装

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching be • AEC-Q101 qualified \n• Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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意法半导体

Automotive-grade N-channel 650 V, 102 m廓 typ., 28 A MDmesh DM6 Power MOSFET in an H짼PAK-7 package

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STMICROELECTRONICS

意法半导体

TO-263

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上传：深圳市佳斯泰科技有限公司

BGA

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上传：深圳市凯睿晟科技有限公司

BGA

ST/意法

上传：芯灿微（深圳）科技有限公司