丝印：GWT60H60DLFB；Package：TO-3P；Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. F

文件：1.49947 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the improved \"H\" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. F • Maximum junction temperature: TJ= 175 °C\n• High speed switching series\n• Minimized tail current\n• VCE(sat)= 1.6 V (typ.) @ IC= 60 A\n• Tight parameters distribution• Safe paralleling\n• Low thermal resistance\n• Low VFsoft recovery co-packaged diode\n• Lead free package;

ST

意法半导体

Package：TO-3P-3，SC-65-3；包装：散装 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 80A 375W TO3P-3L

STMICROELECTRONICS

意法半导体

ULTRAFAST RECTIFIER

Features  Ultra-Fast switching  High current capability  Low reverse leakage current  High surge current capability  Terminals finish: 100% Pure Tin  This is a Pb − free device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request

文件：862.88 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. F

文件：1.49947 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体