Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the \"V\" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermor • Maximum junction temperature: TJ= 175 °C\n• Very high speed switching series\n• Tail-less switching off\n• Low saturation voltage: VCE(sat)= 1.8 V (typ.) @ IC= 20 A• Tight parameters distribution\n• Safe paralleling\n• Low thermal resistance\n• Lead free package;

ST

意法半导体

丝印：GWT20V60F；Package：TO-3P；600 V, 20 A very high speed trench gate field-stop IGBT

文件：1.61814 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Package：TO-3P-3，SC-65-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 40A 167W TO3PF

STMICROELECTRONICS

意法半导体

MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.136 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA)

文件：243.58 Kbytes 页数：10 Pages

TOSHIBA

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