沟槽栅场截止IGBT，M系列，650 V、75 A，低损耗

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermor • 6 µs of short-circuit withstand time \n• VCE(sat) = 1.65 V (typ.) @ IC = 75 A \n• Tight parameter distribution \n• Safer paralleling \n• Positive VCE(sat) temperature coefficient \n• Low thermal resistance \n• Soft and very fast recovery antiparallel diode \n• Maximum junction temperature: TJ = 17;

ST

意法半导体

Trench gate field-stop IGBT, M series 650 V, 75 A low loss

文件：1.00521 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：TRENCH GATE FIELD-STOP IGBT M SE

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, M series 650 V, 75 A low loss

文件：1.00521 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体