1200 V、8 A沟槽栅场截止低损耗M系列IGBT，TO-220封装

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, • 10 µs of minimum short-circuit withstand time \n• VCE(sat) = 1.85 V (typ.) @ IC = 8 A \n• Tight parameter distribution \n• Positive VCE(sat) temperature coefficient \n• Low thermal resistance \n• Soft and very fast recovery antiparallel diode \n• Maximum junction temperature: TJ = 175 °C;

ST

意法半导体

Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package

Features • 10 μs of minimum short-circuit withstand time • VCE(sat) = 1.85 V (typ.) @ IC = 8 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft and very fast recovery antiparallel diode • Maximum junction temperature: TJ = 175 °C

文件：343.72 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：TRENCH GATE FIELD-STOP, 1200 V,

STMICROELECTRONICS

意法半导体

TO-247

ST/意法

上传：深圳庞田科技有限公司

TO-247

ST

上传：深圳市星宇佳科技有限公司