600 V、7 A高速沟槽栅场截止H系列IGBT

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coeffi • High speed switching \n• Tight parameters distribution \n• Safe paralleling \n• Low thermal resistance \n• Short-circuit rated \n• Ultrafast soft recovery antiparallel diode;

ST

意法半导体

丝印：GP7H60DF；Package：TO-220；Trench gate field-stop IGBT, H series 600 V, 7 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：985.08 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 14A 88W TO-220AB

STMICROELECTRONICS

意法半导体

Schottky Barrier Rectifiers

文件：77.99 Kbytes 页数：3 Pages

VAISH

威世

Schottky Barrier Rectifier

文件：147.67 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder d

文件：121.89 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司