Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO-220 package

The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result • Designed for soft commutation only \n• Maximum junction temperature: TJ = 175 °C \n• VCE(sat) = 1.55 V (typ.) @ IC = 30 A \n• Minimized tail current \n• Tight parameter distribution \n• Low thermal resistance \n• Low drop voltage freewheeling co-packaged diode \n• Positive VCE(sat) temperature coe;

ST

意法半导体

TO-247

ST/意法

上传：深圳庞田科技有限公司

TO-247

ST

上传：深圳市星宇佳科技有限公司

TO-247

ST/意法

上传：深圳庞田科技有限公司

TO-247

ST

上传：深圳市轩嘉盛电子有限公司