Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220 package

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. T • Maximum junction temperature : TJ = 175 °C \n• Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A \n• Minimized tail current \n• Tight parameter distribution \n• Low thermal resistance \n• Positive VCE(sat) temperature coefficient;

ST

意法半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 40A 167W TO220AB

STMICROELECTRONICS

意法半导体

TO-247

ST/意法

上传：深圳庞田科技有限公司

TO-247

ST

上传：深圳市星宇佳科技有限公司

TO-247

ST/意法

上传：深圳庞田科技有限公司