600 V、20 A高速沟槽栅场截止IGBT

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coeffi • High speed switching \n• Tight parameters distribution \n• Safe paralleling \n• Low thermal resistance \n• Short-circuit rated \n• Ultrafast soft recovery antiparallel diode;

ST

意法半导体

600 V, 20 A high speed trench gate field-stop IGBT

文件：1.85887 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

Package：TO-220-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 40A 167W TO220

STMICROELECTRONICS

意法半导体

600 V, 20 A high speed trench gate field-stop IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：1.29889 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

600 V, 20 A high speed trench gate field-stop IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：1.29889 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

20A, 60V Dual Common Cathode Trench Schottky Rectifier

文件：523.039 Kbytes 页数：5 Pages

TSC

台湾半导体