Trench gate field-stop IGBT, M series 1200 V, 15 A low loss

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthe • 10 μs of minimum short-circuit withstand time\n• VCE(sat) = 1.85 V (typ.) @ IC = 15 A\n• Tight parameter distribution• Positive VCE(sat) temperature coefficient\n• Low thermal resistance\n• Maximum junction temperature: TJ = 175 °C;

ST

意法半导体

Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package

Features • 10 μs of minimum short-circuit withstand time • VCE(sat) = 1.85 V (typ.) @ IC = 15 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance • Maximum junction temperature: TJ = 175 °C Description This device is an IGBT developed usi

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STMICROELECTRONICS

意法半导体

Package：TO-220-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：TRENCH GATE FIELD-STOP, 1200 V,

STMICROELECTRONICS

意法半导体

TO-220

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上传：深圳市汇创佳电子科技有限公司

TO-220

ST/意法

上传：深圳庞田科技有限公司