STGP10NB60S数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

This IGBT utilizes the advanced PowerMESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).

特性 Features

• Low on-voltage drop (VCE(sat))
• High current capability

简介

STGP10NB60S属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGP10NB60S晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。