Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220FP package

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A • Maximum junction temperature : TJ = 175 °C \n• Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A \n• Very fast and soft recovery co-packaged diode \n• Minimized tail current \n• Tight parameter distribution \n• Low thermal resistance \n• Positive VCE(sat) temperature coefficient;

ST

意法半导体

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：TRENCH GATE FIELD-STOP 650 V, 20

STMICROELECTRONICS

意法半导体

TO-220

st

上传：深圳市汇创佳电子科技有限公司

SDIP2B-26L

ST/意法

上传：深圳庞田科技有限公司

SDIP2B-26L

ST/意法

上传：深圳庞田科技有限公司