7 A, 1200 V very fast IGBT

Features ■ High voltage capability ■ High speed Applications ■ Home appliance ■ Lighting Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior

文件：899.15 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：GD3NC120H；Package：IPAK；7 A, 1200 V very fast IGBT

Features ■ High voltage capability ■ High speed Applications ■ Home appliance ■ Lighting Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior

文件：899.15 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

7 A, 1200 V very fast IGBT

This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications.\n • High voltage capability• High speed;

ST

意法半导体

Package：TO-251-3 短引线，IPak，TO-251AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 16A IPAK

STMICROELECTRONICS

意法半导体