STG75M120F3D8数据手册ST中文资料规格书

描述 Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

特性 Features

10 µs of short-circuit withstand time
Low V
CE(sat) = 1.85 V (typ.) @ I
C = 75 A
Positive V
CE(sat) temperature coefficient
Tight parameter distribution
Maximum junction temperature: T
J = 175 °C