Trench gate field-stop 650 V, 60 A high-speed HB series IGBT die in D7 packing

Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Very low saturation voltage: VCE(sat) = 1.65 V (typ) @ IC = 60 A • Safe paralleling • Tight parameter distribution Applications • Solar • Welding • High frequency converter

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STMICROELECTRONICS

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Trench gate field-stop 650 V, 60 A high-speed HB series IGBT die in D7 packing

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slig • Maximum junction temperature: TJ = 175 °C \n• High speed switching series \n• Minimized tail current \n• Very low saturation voltage: VCE(sat) = 1.65 V (typ) @ IC= 60 A \n• Safe paralleling \n• Tight parameter distribution;

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SOIC-8

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上传：深圳市铭尔达科技有限公司

TO-263

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上传：深圳市汇创佳电子科技有限公司

TO-263

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上传：深圳市汇创佳电子科技有限公司