STF8209A

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

STG8209

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage. ●ESDProtected.

TPC8209

DualN-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100UISTested •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SetTopBox •LowCurrentDC/DC

TPC8209

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSII)

LithiumIonBatteryApplications PortableEquipmentApplications NotebookPCApplications ●Smallfootprintduetosmallandthinpackage ●Lowdrain−sourceONresistance:RDS(ON)=30mΩ(typ.) ●Highforwardtransferadmittance:|Yfs|=10S(typ.) ●Lowleakagecurrent:IDSS=10µA(max

TPCS8209

Highperformance,LowCost20pinOTP

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=19mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=9.2S(typ.) •Lowleakagecurrent:ID

TPCS8209

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII)

TPCS8209

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications

YSo8209MR