SCHOTTKY RECTIFIER

 150 °C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technology  Th

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SMCDIODE

桑德斯微电子

超低正向肖特基二极管

SMC

桑德斯微电子

150 V power Schottky rectifier

Features • High junction temperature capability • Low leakage current • High voltage capabilities • Good trade off between leakage current and forward voltage drop • Low thermal resistance • High frequency operation • ECOPACK®2 compliant for TO-220AB and TO-247, on demand for D²PAK Descr

文件：519.419 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual center tap Schottky rectifiers suited for high frequency switch mode power supply. Packaged in TO-247, TO-220AB and D2PAK, this devices is intended for use to enhance the reliability of the application. FEATURES AND BENEFITS ■ HIGH JUNCTION TEMPERATURE CAPABILITY

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STMICROELECTRONICS

意法半导体

Schottky Barrier Rectifier

FEATURES ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Efficiency ·High surge capability ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot variations for robust device perfor

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ISC

无锡固电