STDRIVEG611数据手册ST中文资料规格书

描述 Description

The STDRIVEG611 is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN.

The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode.

High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG611 optimized for driving high-speed GaN.

The STDRIVEG611 features supply UVLOs tailored to hard switching applications, interlocking to avoid cross-conduction conditions and an overcurrent comparator with SmartSD.

The input pins extended range allows easy interfacing with controllers. A standby pin allows to reduce the power consumption during inactive periods or burst mode.

The STDRIVEG611 operates in the industrial temperature range, -40 °C to 125 °C.

The device is available in a compact QFN 4x5x1 mm package with 0.5 mm pitch.

特性 Features

• High voltage rail up to 600 V
• dV/dt transient immunity ±200 V/ns in full temperature range
• Driver with separated sink and source path for optimal driving:
•2.4 A and 1.2 Ω sink
•1.0 A and 3.7 Ω source
• High-side and low-side linear regulators for 6 V gate driving voltage
• 5 µs high-side startup time and high frequency (> 1 MHz)
• 45 ns with 10 ns matching and 15 ns minimum output pulse
• Hard switching operation and internal bootstrap diode
• Comparator for overcurrent detection with Smart Shutdown
• UVLO function on VCC, VHS, and VLS
• Shutdown, standby, overtemperature with Fault signaling pin
• Separated PGND for Kelvin source driving and current shunt compatibility
• 3.3 V to 20 V compatible inputs with hysteresis and pull-down