STDRIVEG600W中文资料用于GaN晶体管的高压半桥栅极驱动器数据手册ST规格书

描述 Description

The STDRIVEG600W is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET.

The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V.

The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.

The STDRIVEG600W features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.

The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing with microcontroller and DSP.

特性 Features

• dV/dt immunity ±200 V/ns
• Driver current capability:
•1.3/2.4 A source/sink typ @ 25 °C, 6 V
•5.5/6 A source/sink typ @ 25 °C, 15 V
• Separated turn on and turn off gate driver pins
• 45 ns propagation delay with tight matching
• 3.3 V, 5 V TTL/CMOS inputs with hysteresis
• Interlocking function
• UVLO on low-side and high-side sections
• Dedicated pin for shut down functionality
• Over temperature protection