首页>STD9N65DM6AG>规格书详情
STD9N65DM6AG中文资料意法半导体数据手册PDF规格书
STD9N65DM6AG规格书详情
特性 Features
• AEC-Q101 qualified
• Fast-recovery body diode
• Lower RDS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100 avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
描述 Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery
diode series. Compared with the previous MDmesh fast generation, DM6
combines very low recovery charge (Qrr), recovery time (trr) and excellent
improvement in RDS(on) per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Applications
• Switching applications
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST(意法半导体) |
24+ |
TO252 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
STM |
23+ |
TO-252-3 (DPAK) |
50000 |
原装正品 支持实单 |
询价 | ||
ST/意法半导体 |
23+ |
TO-252-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法半导体 |
24+ |
TO-252-3 |
16900 |
原厂原装，价格优势，欢迎洽谈！ |
询价 | ||
ST/意法半导体 |
21+ |
TO-252-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法 |
2223+ |
TO-252 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
ST/意法半导体 |
21+ |
TO-252-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST |
1641+ |
TO252 |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
