首页 >STD6025NLSMOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
SURFACEMOUNTSILICONZENERDIODES VOLTAGERANGE:3.3-200V POWER:5.0Watts Features •CompleteVoltageRange3.3to200Volts •Highpeakreversepowerdissipation •Highreliability •Lowleakagecurrent | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | ||
SURFACEMOUNTSILICONZENERDIODES VZ:3.3-200Volts PD:5Watts FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTSILICONZENERDIODES | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTSILICONZENERDIODES | SUNMATE | |||
5W25VZenerdiode | SUNMATE | |||
12*12mmtactswitch,topactuated,throughhole&SMD Largeoperationalstem Longoperationaltravel Multipleoptionsofstems&force Bossatbottomforbetterpositioning RoHSCompliant ProductFeatures | APEX-ELECTRONICS Apex Electronics Co., Ltd | APEX-ELECTRONICS | ||
12*12mmtactswitch,topactuated,throughhole&SMD Largeoperationalstem Longoperationaltravel Multipleoptionsofstems&force Bossatbottomforbetterpositioning RoHSCompliant ProductFeatures | APEX-ELECTRONICS Apex Electronics Co., Ltd | APEX-ELECTRONICS | ||
A2.5V,Low-Power/Low-DropoutPrecisionVoltageReference | TOUCHSTONE Touchstone Technologies，Inc | TOUCHSTONE |
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