STD5NB30中文资料意法半导体数据手册PDF规格书
STD5NB30规格书详情
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
■ TYPICAL RDS(on) = 0.75 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100 AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
产品属性
- 型号：
STD5NB30
- 功能描述：
MOSFET N-CH 300V 5A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ST/意法 |
24+ |
5000 |
只做原厂渠道 可追溯货源 |
询价 | |||
VBsemi |
24+ |
TO252 |
11000 |
原装正品 有挂有货 假一赔十 |
询价 | ||
24+ |
N/A |
1800 |
询价 | ||||
ST |
17+ |
TO-252 |
6200 |
询价 | |||
ST |
2024+ |
TO-252 |
50000 |
原装现货 |
询价 | ||
VBsemi |
25+ |
TO252 |
6434 |
询价 | |||
ST/意法 |
20+ |
现货很近!原厂很远!只做原装 |
32500 |
现货很近!原厂很远!只做原装 |
询价 | ||
ST/意法 |
2022+ |
252 |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
ST |
NEW |
TO-252 |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
询价 |
