N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：139.27 Kbytes 页数：10 Pages

SAMHOP

三合微科

Mosfets

Samhop

三合微科

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL Ros(on) = 0.0352 ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SO

文件：340.72 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL Ros(on) = 0.0352 ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SO

文件：340.72 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：139.27 Kbytes 页数：10 Pages

SAMHOP

三合微科